SOI Wafers in inventory

3" SOI Wafers

Stock ID Size Type/Dopant Orientation Device Box Handle Qty
(mm) D/H Thick (μm) Res(ohm.cm) Finish (P/E) (μm) Thick(μm) Res(ohm.cm) Finish(P/E)
202 75+/-0.2 P/B <100> 6+/-1.0 1~10 P 3.0+/-5% 500+/-25 1~10 polished 12
461 75+/-0.2 P/B <100> 2.5+/-0.5 1~10 P 1.0+/-5% 500+/-25 1~10 polished 4

4" SOI Wafers

Stock ID Size Type/Dopant Orientation Device Box Handle Qty
(mm) D/H Thick (μm) Res(ohm.cm) Finish (P/E) (μm) Thick(μm) Res(ohm.cm) Finish(P/E)
310 100+/-0.2 P/B <100> 0.6+/-0.1 10~20 P 1.0+/-5% 675+/-10 1~10 etching 6
311 100+/-0.2 P/B <100> 1.0+/-0.1 10~20 P 1.0+/-5% 675+/-10 1~10 etching 8
313 100+/-0.2 P/B <100> 1.5+/-0.1 10~20 P 1.0+/-5% 675+/-10 1~10 etching 8
316 100+/-0.2 P/B <100> 2.0+/-0.1 10~20 P 1.0+/-5% 675+/-10 1~10 etching 7
317 100+/-0.2 P/B <100> 2.5+/-0.1 10~20 P 1.0+/-5% 675+/-10 1~10 etching 8
701 100+/-0.2 P/B <100> 20.0+/-0.1 1~20 P 2.0+/-5% 480+/-10 1~10 polished 1
702 100+/-0.2 P/B <100> 5.0+/-0.5 1~20 P 0.1+/-5% 380+/-10 1~10 polished 2
703 100+/-0.2 P/B <100> 10.0+/-1.0 1~20 P 0.1+/-5% 380+/-10 1~10 polished 2
704 100+/-0.2 P/B <100> 5.0+/-0.5 1~20 P 1.0+/-5% 525+/-10 1~10 polished 4
706 100+/-0.2 P/B <100> 250+/-5.0 1~20 P 0.5+/-5% 475+/-25 1~10 grinding 3
705 100+/-0.2 P/B <100> 10+/-1.0 1~20 P 1.0+/-5% 380+/-10 1~10 polished 2
264 100+/-0.2 P/B <100> 25.0+/-1.0 1~20 P 1.0+/-5% 385+/-10 1~10 polished 1
263 100+/-0.2 P/B <100> 10.0+/-1.0 1~20 P 0.5+/-5% 500+/-10 1~10 polished 1
262 100+/-0.2 P/B <100> 50.0+/-1.0 0.01~0.02 P 4.0+/-5% 500+/-10 0.01~0.02 etched 4
257 100+/-0.2 P/B <100> 120.0+/-1.0 1~10 P 1.0+/-5% 480+/-10 1~10 grinding 2
258 100+/-0.2 P/B <100> 33.0+/-1.0 1~10 P 1.0+/-5% 480+/-10 1~10 grinding 2
259 100+/-0.2 P/B <100> 47.0+/-1.0 1~10 P 1.0+/-5% 480+/-10 1~10 grinding 2
256 100+/-0.2 P/B <100> 5.0+/-1.0 0.008~0.02 P 2.0+/-5% 300+/-10 1~20 polishing 1
248 100+/-0.2 P/B <100> 10+/-1.0 0.01~0.02 P 2.0+/-5% 450+/-10 1~5 grinding 2
249 100+/-0.2 N/Sb N/P(D) <100> 200+/-3.0 0.008~0.02 P 1.0+/-5% 200+/-3 0.008~0.02 polishing 16
251 100+/-0.2 N/As(H) <111> 132+/-3.0 8K~18K P 0 525+/-25 0.0001~0.005 etching 3
252 100+/-0.2 P/B <100> 250+/-3.0 1~20 P 2.0+/-5% 300+/-10 1~20 polishing 6
253 100+/-0.2 P/B <100> 4.0+/-1.0 0.008~0.02 P 1.0+/-5% 500+/-10 1~10 grinding 1
255 100+/-0.2 P/B <100> 15.0+/-1.0 0.008~0.02 P 2.0+/-5% 300+/-10 1~20 polishing 1
244 100+/-0.2 P/B <111> 3.5+/-1.0 0.08~0.02 P 2.0+/-5% 500+/-25 1~10 polishing 1
205 100+/-0.2 P/B <100> 3.0+/-1.0 1~10 P 1.0+/-5% 300+/-10 1~10 polished 1
152 100+/-0.2 N/P <1-0-0> 2.5+/-0.5 1~10 P 1.0+/-5% 400+/-5 1~10 polished 1
188 100+/-0.2 P/B N/Sb(D) <100>(H) 5.0+/-1.0 1~10 P 0.5+/-5% 500+/-10 1~10 polished 1
186 100+/-0.2 PB/(H) <100> 10.0+/-1.0 0.008~0.01 P 2.0+/-5% 455+/-10 1~10 polished 1
180 100+/-0.2 P/B <100> 25.0+/-2.0 1~10 P 1.0+/-5% 500+/-10 1~10 polished 2
134 100+/-0.2 N/Sb(D) P/B <1-0-0> 25.0+/-2.0 0.008~0.01 P 0.5+/-5% 350+/-10 1~10 polished 1
189 100+/-0.2 P/B <100> 25.0+/-1.5 0.015~0.02 P 2.0+/-5% 500+/-10 1~10 polished 3
190 100+/-0.2 P/B <100> 35.0+/-1.0 1~10 P 1.0+/-5% 500+/-25 1~10 polished 1
150 100+/-0.2 N/Sb <1-0-0> 40.0+/-2.0 0.008~0.01 P 3.0μ+/-5% 500+/-25 0.008~0.01 etched 1
246 100+/-0.2 P/B <100> 85.0+/-2.0 0.008~0.01 P 2.0+/-5% 440+/-10 1~10 grinding 11
126 100+/-0.2 P/B <100> 50.0+/-2.0 1~10 P 1.0+/-5% 440+/-10 1~10 grinding 1
138 100+/-0.2 P/B <1-0-0> BPR 3~7 P 1.0μm+/-5% 500+/-25 1~10 P 10
142 100+/-0.2 P/B(D)NP(H) <1-0-0> BPR 3~7 P 1.0μm+/-5% 450+/-25 1~10 P 15
144 100+/-0.2 P/B <1-0-0> BPR 0.01~0.02 P 0.5μm+/-5% 525+/-25 1~10 P 7
158 100+/-0.2 P/B <100> BPR 0.01~0.02 P 0.2+/-5% 525+/-10 1~10 polished 21
161 100+/-0.2 N/Sb(D)N/P(H) <100> BPR 0.01~0.02 P 0.2+/-5% 450+/-10 1~5 polished 18
164 100+/-0.2 N/P <100> BPR 1~5 P 0.5+/-5% 400+/-10 1~5 polished 25
169 100+/-0.2 P/B <100> BPR 1~10 P 0.5+/-5% 450+/-10 1~10 polished 15
191 100+/-0.2 N/Sb <111> BPR <0.06 P 1.0+/-5% 500+/-25 1~10 polished 10
192 100+/-0.2 P/B <100> BPR 1~10 P 3.0+/-5% 500+/-25 1~10 polished 14

BPR = Bonded per request

Double SOI Wafer

SID Size Type/Dopant Orientation Device1 Box Handle Device2 Qty
(mm) D/H Thick Res(ohm.cm) (μm) Thick) Res(ohm.cm) Finish(P/E) Thick Res(ohm.cm)
247 100+/-0.2 P/B <100> 17.0+/-1.0 1~10 0.3+/-5% 525+/-10 1~10 polished 17.0+/-1.0 1~10 2
250 100+/-0.2 N/P <100> 15.0+/-1.0 1~10 0.2+/-5% 380+/-10 1~10 polished 15.0+/-1.0 1~10 2

6" SOI Wafers

Stock ID Size Type/Dopant Orientation Device Box Handle Qty
(mm) D/H Thick (μm) Res(ohm.cm) Finish (P/E) (μm) Thick(μm) Res(ohm.cm) Finish(P/E)
501 150+/-0.2 P/B <100> 1.0+/-0.1 20~40 P 1.0+/-5% 675+/-25 1~10 polished 10
247 150+/-0.2 P/B <100> 11.5+/-1.0 0.001~0.004 P 0.5+/-5% 550+/-10 1~10 polished 3
178 150+/-0.2 P/B <100> P.R 1~10 P 1.0+/-5% 400+/-10 1~10 P or E 18
201 150+/-0.2 P/B <100> P.R 1~10 P 1.0+/-5% 600+/-10 1~10 P or E 17

P or E = Polished or Etching

8" SOI Wafers

Stock ID Size Type/Dopant Orientation Device Box Handle Qty
(mm) D/H Thick (μm) Res(ohm.cm) Finish (P/E) (μm) Thick(μm) Res(ohm.cm) Finish(P/E)
610 200+/-0.2 P/B <100> 10.0+/-1.0 0.05~0.2 P 1.0+/-5% 680+/-10 1~10 grinding 4
611 200+/-0.2 P/B <100> 275+/-5.0 1~20 P 0.5+/-5% 475+/-10 1~10 grinding 50