SOI Specification

MEMS Engineering & Material provides low stress SOI wafers with flexibility for device wafers, buried oxide, and handle wafers. We also provide silicon on glass and other bonded structures. Contact us for additional product information. The following is the specification for our standard SOI wafers:

Device Wafer

	3"	4"	5"	6"
Type	P,N	P,N	P,N	P,N
Resistivity	0.01~100W.cm	0.01~100W.cm	0.01~100W.cm	0.01~100W.cm
Orientation	<100>,<110>	<100>,<110>	<100>,<110>	<100>,<110>
Thickness	2~200μ	2~200μ	2~200μ	2~200μ
Tolerance	+/-0.5μ	+/-0.5μ	+/-0.5μ	+/-1.0μ

Box

	3"	4"	5"	6"
Thickness	0.5~3.0μ	0.5~3.0μ	0.5~3.0μ	0.5~3.0μ
Uniformity	+/-5%	+/-5%	+/-5%	+/-5%

Handle Wafer

	3"	4"	5"	6"
Type	P,N	P,N	P,N	P,N
Resistivity	0.01~100W.cm	0.01~100W.cm	0.01~100W.cm	0.01~100W.cm
Orientation	<100>,<110>	<100>,<110>	<100>,<110>	<100>,<110>
Thickness	250~400μ	300~625μ	350~625μ	400~625μ
Tolerance	+/-2μ	+/-2μ	+/-2μ	+/-3μ