4″ N-type <111> FZ silicon
300 ± 20 µm · 1200 – 3000 Ω·cm · SSP · stock ID 4N-FZ-1200
- Stock ID
- 4N-FZ-1200
- Diameter
- 4″ (100 mm)
- Growth method
- Float Zone (FZ)
- Type
- N-type
- Orientation
- <111>
- Thickness
- 300 ± 20 µm
- Resistivity
- 1200 – 3000 Ω·cm
- Flat / notch
- Semi flat
- Surface
- SSP
- Source
- Siltronic
- Ships in
- 3 days
Compare float zone wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.
Listed in the fz stock wafers. Values are as recorded for the lot; ask us for measured data.