SOI wafers for sale, from stock or made to order
Compare bonded silicon-on-insulator wafers from our Sunnyvale, California inventory, or request a custom device layer, buried oxide and handle wafer. We fabricate SOI for MEMS, sensors and power devices. Stock lots are priced by quotation.
Choose an SOI wafer for your process
An SOI wafer has a silicon device layer, an insulating silicon dioxide layer (BOX), and a supporting silicon handle. Match each layer to your process before choosing a stock ID.
Read the wafer specification guide →Device layer: thickness, doping and orientation
Compare the device thickness and tolerance, P- or N-type doping, resistivity in Ω·cm, and crystal orientation. The thickness listed for an SOI lot is its device layer, not the total wafer thickness. “Per request,” “BPR” and “P.R” mean that device thickness is specified with the order.
Buried oxide: specify BOX separately
Check the BOX thickness independently of the device layer. Our stock listings show BOX in µm. For a custom build, include the oxide thickness and uniformity you need; thermal and CVD oxide options are available.
Handle wafer: thickness and surface finish
Check handle thickness, resistivity and finish on the lot’s specification page, as well as diameter and orientation. Include any required flatness or thickness tolerances when requesting a quote. For a double-device lot, review the second device layer too.
Stock lot or custom bonded SOI?
Choose stock when a listed specification fits your process. For a different layer stack, send the diameter, device / BOX / handle requirements, quantity and required delivery date through our custom SOI inquiry. We confirm feasibility and delivery with your quote.
device layer uniformity, with any resistivity, orientation and thickness
Ultra-flat SOI, without Smart Cut
We have made a major technological breakthrough in making ultra-flat SOI wafers. With it we make SOI wafers as uniform as ±0.1 µm with any resistivity, orientation and thickness, greatly surpassing the limitations of Smart Cut technology.
We can now produce a 0.5 µm device layer with heavy doping, and provide SOI wafers with a device layer thickness of 1.0 ± 0.10 µm. Traditionally this could only be done through a complicated Smart Cut plus epi growth process, which is significantly more expensive.
Where our SOI goes
- MEMS
- Smart sensors
- Power devices
- Semiconductor
Silicon on glass, by anodic bonding
Silicon on glass wafers are fabricated by anodic bonding, which relies on charge migration. A negative potential applied to the glass at elevated temperature drives sodium ions toward the negative electrode, creating a space charge at the glass–silicon interface. That space charge gives a strong electrostatic force that holds both pieces, while oxygen from the glass forms silicon oxide at the interface for a permanent bond.
Used in pressure sensors, solar cells, packaging, optical components.
Our bonded products
- SOI wafer with uniformity of ±0.1 µm
- Multi-device layer SOI wafer
- New engineering substrates (such as GaAs/Si, glass/glass)
- Ultra-flat SOI: the world’s most uniform SOI wafers (±0.1 µm)
In stock 3″ (2)4″ (48)6″ (28)8″ (3) All 81 lots →
What we offer
Flexibility in the thickness of wafer and oxide and in wafer resistivity, and skilled staff who will work with you to design and customize SOI for robust MEMS processes.
Browse SOI inventory →Other bonded structures
Glass to glass, SOS (silicon on sapphire), GaAs/Si, InP/Si, for MEMS and semiconductor applications. We also like to establish partnerships with customers to develop customized bonded structures based on our bonding technologies.
See advanced products →SOI wafer inventory by diameter
81 lots · 431 wafers in stock. Open a diameter below to compare device thickness, BOX, resistivity and quantity, then select a lot for its full specification.
Prices are quoted for your selected lots and quantities. Add wafers to your cart and submit a purchase request; we confirm price and availability before the order proceeds. No payment is collected online.
Filter SOI stock by thickness, doping and orientation → 3-inch SOI wafers
75 ± 0.2 mm · 2 lots · 16 wafers
| Stock ID | Wafer | Thickness | Resistivity Ω·cm | On hand | Price / wafer | Add to cart |
|---|---|---|---|---|---|---|
| SOI-3-202 | 3″ SOI · 6 µm device / 3 µm BOX P/B <100> · BOX 3 µm · handle 500 ± 25 µm polished | 6 ± 1.0 µm | 1 – 10 | 12 wafers | Quote | |
| SOI-3-461 | 3″ SOI · 2.5 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 500 ± 25 µm polished | 2.5 ± 0.5 µm | 1 – 10 | 4 wafers | Quote |
4-inch SOI wafers
100 ± 0.2 mm · 48 lots · 258 wafers
| Stock ID | Wafer | Thickness | Resistivity Ω·cm | On hand | Price / wafer | Add to cart |
|---|---|---|---|---|---|---|
| SOI-4-310 | 4″ SOI · 0.6 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 675 ± 10 µm etching | 0.6 ± 0.1 µm | 10 – 20 | 6 wafers | Quote | |
| SOI-4-311 | 4″ SOI · 1 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 675 ± 10 µm etching | 1.0 ± 0.1 µm | 10 – 20 | 8 wafers | Quote | |
| SOI-4-313 | 4″ SOI · 1.5 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 675 ± 10 µm etching | 1.5 ± 0.1 µm | 10 – 20 | 8 wafers | Quote | |
| SOI-4-316 | 4″ SOI · 2 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 675 ± 10 µm etching | 2.0 ± 0.1 µm | 10 – 20 | 7 wafers | Quote | |
| SOI-4-317 | 4″ SOI · 2.5 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 675 ± 10 µm etching | 2.5 ± 0.1 µm | 10 – 20 | 8 wafers | Quote | |
| SOI-4-701 | 4″ SOI · 20 µm device / 2 µm BOX P/B <100> · BOX 2 µm · handle 480 ± 10 µm polished | 20.0 ± 0.1 µm | 1 – 20 | 1 wafer | Quote | |
| SOI-4-702 | 4″ SOI · 5 µm device / 0.1 µm BOX P/B <100> · BOX 0.1 µm · handle 380 ± 10 µm polished | 5.0 ± 0.5 µm | 1 – 20 | 2 wafers | Quote | |
| SOI-4-703 | 4″ SOI · 10 µm device / 0.1 µm BOX P/B <100> · BOX 0.1 µm · handle 380 ± 10 µm polished | 10.0 ± 1.0 µm | 1 – 20 | 2 wafers | Quote | |
| SOI-4-704 | 4″ SOI · 5 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 525 ± 10 µm polished | 5.0 ± 0.5 µm | 1 – 20 | 4 wafers | Quote | |
| SOI-4-706 | 4″ SOI · 250 µm device / 0.5 µm BOX P/B <100> · BOX 0.5 µm · handle 475 ± 25 µm grinding | 250 ± 5.0 µm | 1 – 20 | 3 wafers | Quote | |
| SOI-4-705 | 4″ SOI · 10 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 380 ± 10 µm polished | 10 ± 1.0 µm | 1 – 20 | 2 wafers | Quote | |
| SOI-4-264 | 4″ SOI · 25 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 385 ± 10 µm polished | 25.0 ± 1.0 µm | 1 – 20 | 1 wafer | Quote | |
| SOI-4-263 | 4″ SOI · 10 µm device / 0.5 µm BOX P/B <100> · BOX 0.5 µm · handle 500 ± 10 µm polished | 10.0 ± 1.0 µm | 1 – 20 | 1 wafer | Quote | |
| SOI-4-262 | 4″ SOI · 50 µm device / 4 µm BOX P/B <100> · BOX 4 µm · handle 500 ± 10 µm etched | 50.0 ± 1.0 µm | 0.01 – 0.02 | 4 wafers | Quote | |
| SOI-4-257 | 4″ SOI · 120 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 480 ± 10 µm grinding | 120.0 ± 1.0 µm | 1 – 10 | 2 wafers | Quote | |
| SOI-4-258 | 4″ SOI · 33 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 480 ± 10 µm grinding | 33.0 ± 1.0 µm | 1 – 10 | 2 wafers | Quote | |
| SOI-4-259 | 4″ SOI · 47 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 480 ± 10 µm grinding | 47.0 ± 1.0 µm | 1 – 10 | 2 wafers | Quote | |
| SOI-4-256 | 4″ SOI · 5 µm device / 2 µm BOX P/B <100> · BOX 2 µm · handle 300 ± 10 µm polishing | 5.0 ± 1.0 µm | 0.008 – 0.02 | 1 wafer | Quote | |
| SOI-4-248 | 4″ SOI · 10 µm device / 2 µm BOX P/B <100> · BOX 2 µm · handle 450 ± 10 µm grinding | 10 ± 1.0 µm | 0.01 – 0.02 | 2 wafers | Quote | |
| SOI-4-249 | 4″ SOI · 200 µm device / 1 µm BOX N/Sb N/P(D) <100> · BOX 1 µm · handle 200 ± 3 µm polishing | 200 ± 3.0 µm | 0.008 – 0.02 | 16 wafers | Quote | |
| SOI-4-251 | 4″ SOI · 132 µm device / 0 µm BOX N/As(H) <111> · BOX 0 µm · handle 525 ± 25 µm etching | 132 ± 3.0 µm | 8K – 18K | 3 wafers | Quote | |
| SOI-4-252 | 4″ SOI · 250 µm device / 2 µm BOX P/B <100> · BOX 2 µm · handle 300 ± 10 µm polishing | 250 ± 3.0 µm | 1 – 20 | 6 wafers | Quote | |
| SOI-4-253 | 4″ SOI · 4 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 500 ± 10 µm grinding | 4.0 ± 1.0 µm | 0.008 – 0.02 | 1 wafer | Quote | |
| SOI-4-255 | 4″ SOI · 15 µm device / 2 µm BOX P/B <100> · BOX 2 µm · handle 300 ± 10 µm polishing | 15.0 ± 1.0 µm | 0.008 – 0.02 | 1 wafer | Quote | |
| SOI-4-244 | 4″ SOI · 3.5 µm device / 2 µm BOX P/B <111> · BOX 2 µm · handle 500 ± 25 µm polishing | 3.5 ± 1.0 µm | 0.08 – 0.02 | 1 wafer | Quote | |
| SOI-4-205 | 4″ SOI · 3 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 300 ± 10 µm polished | 3.0 ± 1.0 µm | 1 – 10 | 1 wafer | Quote | |
| SOI-4-152 | 4″ SOI · 2.5 µm device / 1 µm BOX N/P <100> · BOX 1 µm · handle 400 ± 5 µm polished | 2.5 ± 0.5 µm | 1 – 10 | 1 wafer | Quote | |
| SOI-4-188 | 4″ SOI · 5 µm device / 0.5 µm BOX P/B N/Sb(D) <100> · BOX 0.5 µm · handle 500 ± 10 µm polished | 5.0 ± 1.0 µm | 1 – 10 | 1 wafer | Quote | |
| SOI-4-186 | 4″ SOI · 10 µm device / 2 µm BOX PB/(H) <100> · BOX 2 µm · handle 455 ± 10 µm polished | 10.0 ± 1.0 µm | 0.008 – 0.01 | 1 wafer | Quote | |
| SOI-4-180 | 4″ SOI · 25 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 500 ± 10 µm polished | 25.0 ± 2.0 µm | 1 – 10 | 2 wafers | Quote | |
| SOI-4-134 | 4″ SOI · 25 µm device / 0.5 µm BOX N/Sb(D) P/B <100> · BOX 0.5 µm · handle 350 ± 10 µm polished | 25.0 ± 2.0 µm | 0.008 – 0.01 | 1 wafer | Quote | |
| SOI-4-189 | 4″ SOI · 25 µm device / 2 µm BOX P/B <100> · BOX 2 µm · handle 500 ± 10 µm polished | 25.0 ± 1.5 µm | 0.015 – 0.02 | 3 wafers | Quote | |
| SOI-4-190 | 4″ SOI · 35 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 500 ± 25 µm polished | 35.0 ± 1.0 µm | 1 – 10 | 1 wafer | Quote | |
| SOI-4-150 | 4″ SOI · 40 µm device / 3 µm BOX N/Sb <100> · BOX 3 µm · handle 500 ± 25 µm etched | 40.0 ± 2.0 µm | 0.008 – 0.01 | 1 wafer | Quote | |
| SOI-4-246 | 4″ SOI · 85 µm device / 2 µm BOX P/B <100> · BOX 2 µm · handle 440 ± 10 µm grinding | 85.0 ± 2.0 µm | 0.008 – 0.01 | 11 wafers | Quote | |
| SOI-4-126 | 4″ SOI · 50 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 440 ± 10 µm grinding | 50.0 ± 2.0 µm | 1 – 10 | 1 wafer | Quote | |
| SOI-4-138 | 4″ SOI · Custom-thickness device / 1 µm BOX P/B <100> · BOX 1 µm · handle 500 ± 25 µm polished | Per request | 3 – 7 | 10 wafers | Quote | |
| SOI-4-142 | 4″ SOI · Custom-thickness device / 1 µm BOX P/B(D)NP(H) <100> · BOX 1 µm · handle 450 ± 25 µm polished | Per request | 3 – 7 | 15 wafers | Quote | |
| SOI-4-144 | 4″ SOI · Custom-thickness device / 0.5 µm BOX P/B <100> · BOX 0.5 µm · handle 525 ± 25 µm polished | Per request | 0.01 – 0.02 | 7 wafers | Quote | |
| SOI-4-158 | 4″ SOI · Custom-thickness device / 0.2 µm BOX P/B <100> · BOX 0.2 µm · handle 525 ± 10 µm polished | Per request | 0.01 – 0.02 | 21 wafers | Quote | |
| SOI-4-161 | 4″ SOI · Custom-thickness device / 0.2 µm BOX N/Sb(D)N/P(H) <100> · BOX 0.2 µm · handle 450 ± 10 µm polished | Per request | 0.01 – 0.02 | 18 wafers | Quote | |
| SOI-4-164 | 4″ SOI · Custom-thickness device / 0.5 µm BOX N/P <100> · BOX 0.5 µm · handle 400 ± 10 µm polished | Per request | 1 – 5 | 25 wafers | Quote | |
| SOI-4-169 | 4″ SOI · Custom-thickness device / 0.5 µm BOX P/B <100> · BOX 0.5 µm · handle 450 ± 10 µm polished | Per request | 1 – 10 | 15 wafers | Quote | |
| SOI-4-191 | 4″ SOI · Custom-thickness device / 1 µm BOX N/Sb <111> · BOX 1 µm · handle 500 ± 25 µm polished | Per request | <0.06 | 10 wafers | Quote | |
| SOI-4-192 | 4″ SOI · Custom-thickness device / 3 µm BOX P/B <100> · BOX 3 µm · handle 500 ± 25 µm polished | Per request | 1 – 10 | 14 wafers | Quote | |
| SOI-4-247 | 4″ SOI double-device · 17 µm device / 0.3 µm BOX P/B <100> · BOX 0.3 µm · handle 525 ± 10 µm polished | 17.0 ± 1.0 µm | 1 – 10 | 2 wafers | Quote | |
| SOI-4-250 | 4″ SOI double-device · 15 µm device / 0.2 µm BOX N/P <100> · BOX 0.2 µm · handle 380 ± 10 µm polished | 15.0 ± 1.0 µm | 1 – 10 | 2 wafers | Quote | |
| SOI-4P04-0.3-500 | 4″ SOI · 4 µm device / 0.3 µm BOX P/B <100> · BOX 0.3 µm · handle 500 ± 25 µm etching | 4 ± 0.3 µm | 0.01 – 0.02 | 1 wafer | Quote |
6-inch SOI wafers
150 ± 0.2 mm · 28 lots · 98 wafers
| Stock ID | Wafer | Thickness | Resistivity Ω·cm | On hand | Price / wafer | Add to cart |
|---|---|---|---|---|---|---|
| SOI-6-501 | 6″ SOI · 1 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 675 ± 25 µm polished | 1.0 ± 0.1 µm | 20 – 40 | 10 wafers | Quote | |
| SOI-6-247 | 6″ SOI · 11.5 µm device / 0.5 µm BOX P/B <100> · BOX 0.5 µm · handle 550 ± 10 µm polished | 11.5 ± 1.0 µm | 0.001 – 0.004 | 3 wafers | Quote | |
| SOI-6-178 | 6″ SOI · Custom-thickness device / 1 µm BOX P/B <100> · BOX 1 µm · handle 400 ± 10 µm polished or etched | Per request | 1 – 10 | 18 wafers | Quote | |
| SOI-6-201 | 6″ SOI · Custom-thickness device / 1 µm BOX P/B <100> · BOX 1 µm · handle 600 ± 10 µm polished or etched | Per request | 1 – 10 | 17 wafers | Quote | |
| SOI-6N02-1-600 | 6″ SOI · 2 µm device / 1 µm BOX N/P <100> · BOX 1 µm · handle 600 ± 10 µm polished | 2 ± 0.5 µm | 1 – 10 | 1 wafer | Quote | |
| SOI-6P03-1.6-610 | 6″ SOI · 3 µm device / 1.6 µm BOX P/B <100> · BOX 1.6 µm · handle 610 ± 10 µm polished with oxide | 3 ± 1.0 µm | 7 – 13 | 4 wafers | Quote | |
| SOI-6N03.5-1-400 | 6″ SOI · 3.5 µm device / 1 µm BOX N/P <100> · BOX 1 µm · handle 400 ± 10 µm polished with oxide | 3.5 ± 0.5 µm | 1 – 10 | 1 wafer | Quote | |
| SOI-6P05-2-600 | 6″ SOI · 5 µm device / 2 µm BOX P/B <100> · BOX 2 µm · handle 600 ± 10 µm polished | 5 ± 0.5 µm | 1 – 5 | 1 wafer | Quote | |
| SOI-6N07-0.4-650 | 6″ SOI · 7 µm device / 0.4 µm BOX N/P <100> · BOX 0.4 µm · handle 650 ± 10 µm polished | 7 ± 0.5 µm | 1 – 10 | 1 wafer | Quote | |
| SOI-6N08-0.5-400 | 6″ SOI · 8 µm device / 0.5 µm BOX N/As <100> · BOX 0.5 µm · handle 400 ± 10 µm polished with oxide | 8 ± 0.5 µm | <0.005 | 2 wafers | Quote | |
| SOI-6N010-0.2-500 | 6″ SOI · 10 µm device / 0.2 µm BOX N/P <100> · BOX 0.2 µm · handle 500 ± 10 µm polished | 10 ± 1.0 µm | 1 – 10 | 2 wafers | Quote | |
| SOI-6P012-1-600 | 6″ SOI · 12 µm device / 1 µm BOX N/P <100> · BOX 1 µm · handle 600 ± 10 µm polished with oxide | 12 ± 1.0 µm | 1 – 10 | 1 wafer | Quote | |
| SOI-6P015-1-550 | 6″ SOI · 15 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 550 ± 10 µm polished | 15 ± 1.0 µm | 1 – 10 | 1 wafer | Quote | |
| SOI-6P015-0.2-500 | 6″ SOI · 15 µm device / 0.2 µm BOX P/B <100> · BOX 0.2 µm · handle 500 ± 10 µm polished | 15 ± 1.0 µm | 0.01 – 0.02 | 1 wafer | Quote | |
| SOI-6P115-0.1-310 | 6″ SOI · 15 µm device / 0.1 µm BOX P/B <110> · BOX 0.1 µm · handle 310 ± 10 µm polished | 15 ± 1.0 µm | 0.1 – 1 | 1 wafer | Quote | |
| SOI-6N025-2-400 | 6″ SOI · 20 µm device / 2 µm BOX N/P <100> · BOX 2 µm · handle 400 ± 10 µm polished with oxide | 20 ± 1.0 µm | 1 – 10 | 1 wafer | Quote | |
| SOI-6P020-1-625 | 6″ SOI · 20 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 625 ± 15 µm etched | 20 ± 1.0 µm | 1 – 10 | 8 wafers | Quote | |
| SOI-6P020-1-500 | 6″ SOI · 20 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 380 ± 10 µm polished | 20 ± 0.5 µm | 0.01 – 0.02 | 1 wafer | Quote | |
| SOI-6P025-0.2-500 | 6″ SOI · 25 µm device / 0.2 µm BOX P/B <100> · BOX 0.2 µm · handle 500 ± 10 µm polished | 25 ± 1.0 µm | 0.01 – 0.02 | 3 wafers | Quote | |
| SOI-6N025-2-400-2 | 6″ SOI · 25 µm device / 2 µm BOX N/P <100> · BOX 2 µm · handle 400 ± 10 µm polished with oxide | 25 ± 1.0 µm | 1 – 10 | 3 wafers | Quote | |
| SOI-6P030-1-500 | 6″ SOI · 30 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 500 ± 10 µm polished | 30 ± 0.5 µm | 0.01 – 0.02 | 1 wafer | Quote | |
| SOI-6P030-1-625 | 6″ SOI · 30 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 625 ± 10 µm etched | 30 ± 1.0 µm | 1 – 10 | 8 wafers | Quote | |
| SOI-6P035-2-550 | 6″ SOI · 35 µm device / 2 µm BOX P/B <100> · BOX 2 µm · handle 550 ± 10 µm polished | 35 ± 1.0 µm | 1 – 20 | 3 wafers | Quote | |
| SOI-6P050-1-500 | 6″ SOI · 50 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 500 ± 10 µm polished | 50 ± 0.5 µm | 0.01 – 0.02 | 2 wafers | Quote | |
| SOI-6N075-1-625 | 6″ SOI · 75 µm device / 1 µm BOX N/P <100> · BOX 1 µm · handle 625 ± 15 µm polished with oxide | 75 ± 1.0 µm | 0.1 – 1 | 1 wafer | Quote | |
| SOI-6N080-2-320 | 6″ SOI · 80 µm device / 2 µm BOX N/As <100> · BOX 2 µm · handle 320 ± 15 µm polished | 80 ± 1.0 µm | 0.001 – 0.005 | 1 wafer | Quote | |
| SOI-6N0120-3-500 | 6″ SOI · 120 µm device / 3 µm BOX N/P <100> · BOX 3 µm · handle 500 ± 10 µm polished with oxide | 120 ± 1.0 µm | 1 – 10 | 1 wafer | Quote | |
| SOI-6P0200-1-625 | 6″ SOI · 200 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 625 ± 10 µm polished | 200 ± 1.0 µm | 1 – 10 | 1 wafer | Quote |
8-inch SOI wafers
200 ± 0.2 mm · 3 lots · 59 wafers
| Stock ID | Wafer | Thickness | Resistivity Ω·cm | On hand | Price / wafer | Add to cart |
|---|---|---|---|---|---|---|
| SOI-8-610 | 8″ SOI · 10 µm device / 1 µm BOX P/B <100> · BOX 1 µm · handle 680 ± 10 µm grinding | 10.0 ± 1.0 µm | 0.05 – 0.2 | 4 wafers | Quote | |
| SOI-8-611 | 8″ SOI · 275 µm device / 0.5 µm BOX P/B <100> · BOX 0.5 µm · handle 475 ± 10 µm grinding | 275 ± 5.0 µm | 1 – 20 | 50 wafers | Quote | |
| SOI-8P013-0.5-700 | 8″ SOI · 13 µm device / 0.5 µm BOX P/B <100> · BOX 0.5 µm · handle 700 ± 25 µm etching | 13 ± 1 µm | 1 – 10 | 5 wafers | Quote |
Specification
The specification for our standard SOI wafers. We also build outside this range; contact us for additional product information.
Beyond the standard range: device layer 100 nm – 200 µm, buried oxide up to 15 µm, handle wafer as thin as 100 µm.
See SOI in stock →Purchasing SOI wafers
Stock and custom requests go to the same team at MEMS Engineering & Material in Sunnyvale.
Request an SOI quoteHow do I purchase SOI wafers from inventory?
Open a stock lot, select the quantity and add it to your cart. Submit the cart as a purchase request with your contact details. Our team follows up with pricing and availability; submitting a request does not collect payment.
How much do SOI wafers cost?
Our SOI inventory is priced by quotation. Include the stock ID and quantity so we can quote the exact lot. For custom SOI, provide your layer specifications. There is no published SOI price list on this site.
Where do the wafers ship from, and when?
Our inventory is stocked in Sunnyvale, California. We confirm availability, freight and delivery with your order; a stock count is not a promised ship date. For time-sensitive work, include your required date in the inquiry.
Can I order a different device thickness or layer stack?
Yes, you can request custom bonded SOI and multi-device-layer structures. See our standard SOI specification and send the requirements that differ. For silicon on glass, sapphire or other substrates, see our bonded substrates.