12″ P-type <100> CZ silicon
800-900 µm · > 1 Ω·cm · Grinded · stock ID 12-3
- Stock ID
- 12-3
- Diameter
- 12″ (300 mm)
- Growth method
- Czochralski (CZ)
- Type
- P-type
- Orientation
- <100>
- Thickness
- 800-900 µm
- Resistivity
- > 1 Ω·cm
- Flat / notch
- Notch
- Front side
- Grinded
- Back side / grade
- Fall Out
- Source
- Siltronic
Compare cz silicon wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.
Listed in the silicon stock wafers. Values are as recorded for the lot; ask us for measured data.