3″ SOI · 6 µm device / 3 µm BOX
P/B <100> · 1 – 10 Ω·cm · 500 µm handle · stock ID 202
- Stock ID
- 202
- Diameter
- 3″ (75 ± 0.2 mm)
- Device type / dopant
- P/B
- Device orientation
- <100>
- Device thickness
- 6 ± 1.0 µm
- Device resistivity
- 1 – 10 Ω·cm
- Device finish
- Polished
- Buried oxide (BOX)
- 3.0 µm ± 5%
- Handle type / dopant
- P/B
- Handle orientation
- <100>
- Handle thickness
- 500 ± 25 µm
- Handle resistivity
- 1 – 10 Ω·cm
- Handle finish
- Polished
Compare soi wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.
Listed in the soi stock list. Values are as recorded for the lot; ask us for measured data.
Layer stack
Not to scale Device 6 ± 1.0 µm
Buried oxide 3 µm
Handle 500 ± 25 µm