4″ SOI · 50 µm device / 1 µm BOX

P/B <100> · 1 – 10 Ω·cm · 440 µm handle · stock ID 126

Stock ID
126
Diameter
4″ (100 ± 0.2 mm)
Device type / dopant
P/B
Device orientation
<100>
Device thickness
50.0 ± 2.0 µm
Device resistivity
1 – 10 Ω·cm
Device finish
Polished
Buried oxide (BOX)
1.0 µm ± 5%
Handle type / dopant
P/B
Handle orientation
<100>
Handle thickness
440 ± 10 µm
Handle resistivity
1 – 10 Ω·cm
Handle finish
Grinding

Compare soi wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.

Listed in the soi stock list. Values are as recorded for the lot; ask us for measured data.

Layer stack

Not to scale