4″ SOI · 10 µm device / 2 µm BOX

PB/(H) <100> · 0.008 – 0.01 Ω·cm · 455 µm handle · stock ID 186

Stock ID
186
Diameter
4″ (100 ± 0.2 mm)
Device type / dopant
PB/(H)
Device orientation
<100>
Device thickness
10.0 ± 1.0 µm
Device resistivity
0.008 – 0.01 Ω·cm
Device finish
Polished
Buried oxide (BOX)
2.0 µm ± 5%
Handle type / dopant
PB/(H)
Handle orientation
<100>
Handle thickness
455 ± 10 µm
Handle resistivity
1 – 10 Ω·cm
Handle finish
Polished

Compare soi wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.

Listed in the soi stock list. Values are as recorded for the lot; ask us for measured data.

Layer stack

Not to scale