4″ SOI double-device · 17 µm device / 0.3 µm BOX
P/B <100> · 1 – 10 Ω·cm · 525 µm handle · stock ID 247
- Stock ID
- 247
- Diameter
- 4″ (100 ± 0.2 mm)
- Device type / dopant
- P/B
- Device orientation
- <100>
- Device thickness
- 17.0 ± 1.0 µm
- Device resistivity
- 1 – 10 Ω·cm
- Device finish
- Polished
- Second device thickness
- 17.0 ± 1.0 µm
- Second device resistivity
- 1 – 10 Ω·cm
- Buried oxide (BOX)
- 0.3 µm ± 5%
- Handle type / dopant
- P/B
- Handle orientation
- <100>
- Handle thickness
- 525 ± 10 µm
- Handle resistivity
- 1 – 10 Ω·cm
- Handle finish
- Polished
Compare soi wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.
Listed in the soi stock list. Values are as recorded for the lot; ask us for measured data.
Layer stack
Not to scale Device 17.0 ± 1.0 µm
Buried oxide 0.3 µm
Device 2 17.0 ± 1.0 µm
Buried oxide 0.3 µm
Handle 525 ± 10 µm