4″ SOI double-device · 15 µm device / 0.2 µm BOX

N/P <100> · 1 – 10 Ω·cm · 380 µm handle · stock ID 250

Stock ID
250
Diameter
4″ (100 ± 0.2 mm)
Device type / dopant
N/P
Device orientation
<100>
Device thickness
15.0 ± 1.0 µm
Device resistivity
1 – 10 Ω·cm
Device finish
Polished
Second device thickness
15.0 ± 1.0 µm
Second device resistivity
1 – 10 Ω·cm
Buried oxide (BOX)
0.2 µm ± 5%
Handle type / dopant
N/P
Handle orientation
<100>
Handle thickness
380 ± 10 µm
Handle resistivity
1 – 10 Ω·cm
Handle finish
Polished

Compare soi wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.

Listed in the soi stock list. Values are as recorded for the lot; ask us for measured data.

Layer stack

Not to scale