4″ SOI · 132 µm device / 0 µm BOX

N/As(H) <111> · 8K – 18K Ω·cm · 525 µm handle · stock ID 251

Stock ID
251
Diameter
4″ (100 ± 0.2 mm)
Device type / dopant
N/As(H)
Device orientation
<111>
Device thickness
132 ± 3.0 µm
Device resistivity
8K – 18K Ω·cm
Device finish
Polished
Buried oxide (BOX)
0
Handle type / dopant
N/As(H)
Handle orientation
<111>
Handle thickness
525 ± 25 µm
Handle resistivity
0.0001 – 0.005 Ω·cm
Handle finish
Etching

Compare soi wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.

Listed in the soi stock list. Values are as recorded for the lot; ask us for measured data.

Layer stack

Not to scale