4″ SOI · 15 µm device / 2 µm BOX
P/B <100> · 0.008 – 0.02 Ω·cm · 300 µm handle · stock ID 255
- Stock ID
- 255
- Diameter
- 4″ (100 ± 0.2 mm)
- Device type / dopant
- P/B
- Device orientation
- <100>
- Device thickness
- 15.0 ± 1.0 µm
- Device resistivity
- 0.008 – 0.02 Ω·cm
- Device finish
- Polished
- Buried oxide (BOX)
- 2.0 µm ± 5%
- Handle type / dopant
- P/B
- Handle orientation
- <100>
- Handle thickness
- 300 ± 10 µm
- Handle resistivity
- 1 – 20 Ω·cm
- Handle finish
- Polishing
Compare soi wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.
Listed in the soi stock list. Values are as recorded for the lot; ask us for measured data.
Layer stack
Not to scale Device 15.0 ± 1.0 µm
Buried oxide 2 µm
Handle 300 ± 10 µm