4″ SOI · 0.6 µm device / 1 µm BOX

P/B <100> · 10 – 20 Ω·cm · 675 µm handle · stock ID 310

Stock ID
310
Diameter
4″ (100 ± 0.2 mm)
Device type / dopant
P/B
Device orientation
<100>
Device thickness
0.6 ± 0.1 µm
Device resistivity
10 – 20 Ω·cm
Device finish
Polished
Buried oxide (BOX)
1.0 µm ± 5%
Handle type / dopant
P/B
Handle orientation
<100>
Handle thickness
675 ± 10 µm
Handle resistivity
1 – 10 Ω·cm
Handle finish
Etching

Compare soi wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.

Listed in the soi stock list. Values are as recorded for the lot; ask us for measured data.

Layer stack

Not to scale