6″ SOI · 1 µm device / 1 µm BOX

P/B <100> · 20 – 40 Ω·cm · 675 µm handle · stock ID 501

Stock ID
501
Diameter
6″ (150 ± 0.2 mm)
Device type / dopant
P/B
Device orientation
<100>
Device thickness
1.0 ± 0.1 µm
Device resistivity
20 – 40 Ω·cm
Device finish
Polished
Buried oxide (BOX)
1.0 µm ± 5%
Handle type / dopant
P/B
Handle orientation
<100>
Handle thickness
675 ± 25 µm
Handle resistivity
1 – 10 Ω·cm
Handle finish
Polished

Compare soi wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.

Listed in the soi stock list. Values are as recorded for the lot; ask us for measured data.

Layer stack

Not to scale