6″ SOI · 3 µm device / 1.6 µm BOX

P/B <100> · 7 – 13 Ω·cm · 610 µm handle · stock ID 33

Stock ID
33 (6P03-1.6-610)
Diameter
6″ (150 ± 0.2 mm)
Device type / dopant
P/B
Device orientation
<100>
Device thickness
3 ± 1.0 µm
Device resistivity
7 – 13 Ω·cm
Device finish
Polished
Buried oxide (BOX)
1.6 µm ± 5%
Handle type / dopant
P/B
Handle orientation
<100>
Handle thickness
610 ± 10 µm
Handle resistivity
15 – 25 Ω·cm
Handle finish
Polished with oxide

Compare soi wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.

Listed in the soi inventory workbook. Values are as recorded for the lot; ask us for measured data.

Layer stack

Not to scale