6″ SOI · 120 µm device / 3 µm BOX

N/P <100> · 1 – 10 Ω·cm · 500 µm handle · stock ID 18

Stock ID
18 (6N0120-3-500)
Diameter
6″ (150 ± 0.2 mm)
Device type / dopant
N/P
Device orientation
<100>
Device thickness
120 ± 1.0 µm
Device resistivity
1 – 10 Ω·cm
Device finish
Polished
Buried oxide (BOX)
3 µm ± 5%
Handle type / dopant
N/P
Handle orientation
<100>
Handle thickness
500 ± 10 µm
Handle resistivity
1 – 10 Ω·cm
Handle finish
Polished with oxide

Compare soi wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.

Listed in the soi inventory workbook. Values are as recorded for the lot; ask us for measured data.

Layer stack

Not to scale