6″ SOI · 200 µm device / 1 µm BOX
P/B <100> · 1 – 10 Ω·cm · 625 µm handle · stock ID 36
- Stock ID
- 36 (6P0200-1-625)
- Diameter
- 6″ (150 ± 0.2 mm)
- Device type / dopant
- P/B
- Device orientation
- <100>
- Device thickness
- 200 ± 1.0 µm
- Device resistivity
- 1 – 10 Ω·cm
- Device finish
- Polished
- Buried oxide (BOX)
- 1 µm ± 5%
- Handle type / dopant
- P/B
- Handle orientation
- <100>
- Handle thickness
- 625 ± 10 µm
- Handle resistivity
- 1 – 10 Ω·cm
- Handle finish
- Polished
Compare soi wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.
Listed in the soi inventory workbook. Values are as recorded for the lot; ask us for measured data.
Layer stack
Not to scale Device 200 ± 1.0 µm
Buried oxide 1 µm
Handle 625 ± 10 µm