6″ SOI · 200 µm device / 1 µm BOX

P/B <100> · 1 – 10 Ω·cm · 625 µm handle · stock ID 36

Stock ID
36 (6P0200-1-625)
Diameter
6″ (150 ± 0.2 mm)
Device type / dopant
P/B
Device orientation
<100>
Device thickness
200 ± 1.0 µm
Device resistivity
1 – 10 Ω·cm
Device finish
Polished
Buried oxide (BOX)
1 µm ± 5%
Handle type / dopant
P/B
Handle orientation
<100>
Handle thickness
625 ± 10 µm
Handle resistivity
1 – 10 Ω·cm
Handle finish
Polished

Compare soi wafers in stock, or use our wafer specification guide to read thickness, doping and finish values.

Listed in the soi inventory workbook. Values are as recorded for the lot; ask us for measured data.

Layer stack

Not to scale